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| DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK222 RF AMPLIFIER FOR FM TUNER AND VHF TV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD FEATURES * The Characteristic of Cross-Modulation is good. CM = 92 dB TYP. @ f = 200 MHz, GR = -30 dB PACKAGE DIMENSIONS (Unit: mm) 0.4 +0.1 -0.05 1.5 +0.2 -0.1 2.8 +0.2 -0.3 * Low Noise Figure: * High Power Gain: * Enhancement Type. NF1 = 1.2 dB TYP. (f = 200 MHz) NF2 = 1.0 dB TYP. (f = 55 MHz) GPS = 23 dB TYP. (f = 200 MHz) (1.8) 0.85 0.95 2.90.2 2 * Automatically Mounting: * Small Package: Embossed Type Taping 4 Pins Mini Mold 1 5 5 Drain to Source Voltage Gate1 to Source Voltage Gate2 to Source Voltage Gate1 to Drain Voltage Gate2 to Drain Voltage Drain Current Total Power Dissipation Channel Temperature Storage Temperature *1 RL 10 k VDSX VG1S VG2S VG1D VG2D ID PD Tch Tstg 8 18 (10)*1 18 18 25 200 125 -55 to +125 8 (10)*1 V 0.8 V V V V mA mW C C 1.1 +0.2 -0.1 0.4 +0.1 -0.05 0.16 +0.1 -0.06 ABSOLUTE MAXIMUM RATINGS (TA = 25 C) 0.6 +0.1 -0.05 5 0 to 0.1 5 1. 2. 3. 4. Source Drain Gate 2 Gate 1 PRECAUTION Avoid high static voltages or electric fields so that this device would not suffer from any damage due to those voltage or fields. Document No. P10574EJ2V0DS00 (2nd edition) (Previous No. TD-2267) Date Published August 1995 P Printed in Japan 4 (1.9) * Suitable for use as RF amplifier in FM tuner and VHF TV tuner. 3 0.4 +0.1 -0.05 (c) 1989 1993 3SK222 ELECTRICAL CHARACTERISTICS (TA = 25 C) CHARACTERISTIC Drain to Source Breakdown Voltage Drain Current Gate1 to Source Cutoff Voltage Gate2 to Source Cutoff Voltage Gate1 Reverse Current Gate2 Reverse Current Forward Transfer Admittance Input Capacitance Output Capacitance Reverse Transfer Capacitance Power Gain Noise Figure 1 Noise Figure 2 SYMBOL BVDSX MIN. 18 TYP. MAX. UNIT V TEST CONDITIONS VG1S = VG2S = -2 V, ID = 10 A VDS = 6 V, VG2S = 3 V, VG1S = 0.75 V VDS = 6 V, VG2S = 3 V, ID = 10 A VDS = 6 V, VG2S = 3 V, ID = 10 A VDS = 0, VG2S = 0, VG1S = 8 V VDS = 0, VG1S = 0, VG2S = 8 V VDS = 5 V, VG2S = 4 V, ID = 10 mA f = 1 kHz VDS = 6 V, VG2S = 3 V, ID = 10 mA f = 1 MHz IDSX VG1S(off) 0.01 0 8.0 +1.0 mA V VG2S(off) 0 +1.0 20 20 V IG1SS IG2SS |yfs| 15 19.5 nA nA mS Ciss CDSS Crss 3.6 1.0 4.3 1.5 0.02 5.0 2.0 0.03 pF pF pF GPS NF1 NF2 21.0 23.0 1.2 1.0 2.0 2.0 dB dB dB VDS = 6 V, VG2S = 4 V, ID = 10 mA f = 200 MHz VDS = 6 V, VG2S = 4 V, ID = 10 mA f = 55 MHz IDSX Classification Class Marking IDSX (mA) V21/VBA* V21 0.01 to 3.0 V22/VBB* V22 1.0 to 8.0 * Old specification/New specification 2 3SK222 TYPICAL CHARACTERISTICS (TA = 25 C) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE PT - Total Power Dissipation - mW DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 400 300 200 100 ID - Drain Current - mA 25 20 15 10 5 0 3 6 9 VG2S = 3 V VG1S = 1.8 V 1.6 V 1.4 V 1.2 V 1.0 V 0.8 V 0.6 V 12 15 VDS - Drain to Source Voltage - V 0 25 50 75 100 125 TA - Ambient Temperature - C |yfs| - Forward Transfer Admittance - mS DRAIN CURRENT vs. GATE1 TO SOURCE VOLTAGE 25 20 15 10 5 0 0.5 1.0 1.5 2.0 2.0 V 1.5 V 1.0 V 2.5 VDS = 6 V VG2S = 4 V 3.5 V 3.0 V 2.5 V FORWARD TRANSFER ADMITTANCE vs. GATE1 TO SOURCE VOLTAGE 40 32 24 16 8 1.0 V 0 0.5 1.0 1.5 2.0 2.5 VG2S = 4 V 3.0 V 3.5 V 2.0 V 2.5 V 1.5 V VDS = 6 V f = 1 kHz ID - Drain Current - mA VG1S - Gate1 to Source Voltage - V VG1S - Gate1 to Source Voltage - V |yfs| - Forward Transfer Admittance - mS FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 40 32 24 16 8 0 1.0 V 4 1.5 V 8 2.0 V 12 16 20 VG2S = 4 V 3.5 V 3.0 V 2.5 V VDS = 6 V f = 1 kHz Ciss - Input Capacitance - pF INPUT CAPACITANCE vs. GATE2 TO SOURCE VOLTAGE 7.0 ID = 10 mA (at VDS = 6 V VG2S = 4 V) f = 1 MHz 6.0 5.0 4.0 3.0 ID - Drain Current - mA 2.0 -1.0 0 1.0 2.0 3.0 4.0 VG2S - Gate2 to Source Voltage - V 3 3SK222 OUTPUT CAPACITANCE vs. GATE2 TO SOURCE VOLTAGE 2.5 COSS - Output Capacitance - pF ID = 10 mA (at VDS = 6 V VG2S = 4 V) f = 1 MHz 10 POWER GAIN AND NOISE FIGURE vs. GATE2 TO SOURCE VOLTAGE ID = 10 mA 20 (at VDS = 6 V V) VG2S = 4 f = 200 MHz GPS - Power Gain - dB 10 GPS 1.5 NF - Noise Figure - dB 2.0 5 0 1.0 -10 NF 0 2.0 4.0 6.0 8.0 0.5 -20 0 -1.0 0 1.0 2.0 3.0 4.0 0 -2.0 VG2S - Gate2 to Source Voltage - V VG2S - Gate2 to Source Voltage - V 4 3SK222 NF TEST CIRCUIT AT f = 55 MHz VG2S VDS RFC 2.2 k Ferrite Beads 1 500 pF 1 500 pF 1 000 pF INPUT 3.3 k 50 27 pF 47 k 1 000 pF OUTPUT 47 k 27 pF 3.3 k 50 VG1S GPS AND NF TEST CIRCUIT AT f = 200 MHz VG2S 1 000 pF 22 k 1 000 pF Ferrite Beads INPUT 50 1 000 pF 22 k L3 7 pF L1 15 pF 15 pF L2 1 000 pF 1 000 pF 7 pF OUTPUT 50 1 000 pF 1 000 pF VG1S VDS L1: 0.6 mm U.E.W 7 mm 3 T L2: 0.6 mm U.E.W 7 mm 3 T L3: RFC 2.2 H 5 3SK222 No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices in "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact NEC Sales Representative in advance. Anti-radioactive design is not implemented in this product. M4 94.11 2 |
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